Quantum Confinement and Volume Inversion in MOS3 Model for Short-Channel Tri-Gate MOSFETs

被引：13

作者：

Kloes, Alexander ^{[1
]}

Schwarz, Mike ^{[3
]}

Holtij, Thomas ^{[1
,2
]}

Navas, Andres ^{[4
]}

机构：

[1] Tech Hsch Mittelhessen, Compentence Ctr Nanoelect & Photon, D-35390 Giessen, Germany

[2] Univ Rovira & Virgili, Tarragona 43003, Spain

[3] Robert Bosch GmbH, D-72762 Reutlingen, Germany

[4] Tech Hsch Mittelhessen, D-35390 Giessen, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 08期

关键词：

Compact model; FinFET; MOSFET; quantum; short-channel; triple gate; volume inversion;

D O I：

10.1109/TED.2013.2271093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An efficient way to include the effects of quantum confinement and volume inversion in the MOS3 compact model for lightly doped triple-gate silicon-on-insulator MOSFETs is presented. The model is verified with numerical results based on the nonequilibrium Green's function formalism. The numerically efficient modeling approach shows a good agreement down to a channel length of 10 nm and silicon fin thickness of 3 nm.

引用

页码：2691 / 2694

页数：4

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