Hydrogen implantation and annealing-induced exfoliation process in SiC wafers with various crystal orientations

被引：4

作者：

Senga, Kei ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

Suda, Jun

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, PESEC, Kyoto 6158510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 07期

关键词：

silicon carbide; hydrogen implantation; Smart-Cut (R) technology;

D O I：

10.1143/JJAP.47.5352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of time and temperature were investigated in wafer exfoliation process by hydrogen implantation for 4H-SiC wafers with various orientations. on-axis and 8 degrees oft-axis (0001), (1100). and (11 (2) over bar0). Void formation occurs isotropically for all the orientations investigated. The blistering rate (R) of 4H-SiC wits found to be dependent on the crystal orientation of the water; R(SiC)(0001)on-axis less than or similar to R(SiC)(0001)8 degrees off-axis <= R(SiC)(1 (1) over bar 00) < R(SiC)(11<(2)over bar>0). The blistering rate of (11 (2) over bar0) is faster than those of the other three orientations. This result suggests that different annealing conditions are needed when fabricating SiC-on-insulator wafers of different crystal orientations.

引用

页码：5352 / 5354

页数：3

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