Colour detection using a buried double p-n junction structure implemented in the CMOS process

被引：57
|
作者：
Lu, GN
Chouikha, MB
Sou, G
Sedjil, M
机构：
[1] Lab. d'Electron. Analogique M., Univ. Paris Pierre et Marie Curie, 75252 Paris Cedex 05, Case 203
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 06期
关键词：
semiconductor devices; sensors;
D O I：
10.1049/el:19960337
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors present a novel technique for monochromatic colour detection. By using a buried double p-n junction (BDJ) structure, wavelength-dependent photocurrents I1 and I2 can be measured. And the incident light wavelength can be identified from the ratio I2/I1. The device operation was verified with a test circuit implemented in CMOS process.
引用
收藏
页码：594 / 596
页数：3
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