Correlation of indentation-induced phase transformations with the degree of relaxation of ion-implanted amorphous silicon

被引：4

作者：

Aji, Leonardus B. Bayu ^{[1
]}

Ruffell, S. ^{[1
]}

Haberl, B. ^{[1
]}

Bradby, J. E. ^{[1
]}

Williams, J. S. ^{[1
]}

机构：

[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 0200, Australia

来源：

JOURNAL OF MATERIALS RESEARCH | 2013年 / 28卷 / 08期

基金：

澳大利亚研究理事会;

关键词：

STRUCTURAL RELAXATION; SPHERICAL INDENTATION; A-SI; SPECTRUM; DYNAMICS; DEFECTS; ORDER;

D O I：

10.1557/jmr.2013.32

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The probability for amorphous silicon (a-Si) to phase transform under indentation testing is statistically determined as a function of annealing temperature from the probability of a pop-out event occurring on the unloading curve. Raman microspectroscopy is used to confirm that the presence of a pop-out event during indentation is a clear signature that a-Si undergoes phase transformation. The probability for such a phase transformation increases with annealing temperature and reaches 100% at a temperature of 340 degrees C, a temperature well before the temperature where the average bond-angle distortion is fully minimized. This suggests that multiple processes are occurring during full relaxation.

引用

页码：1056 / 1060

页数：5

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