Carbide-Derived Carbon by Electrochemical Etching of Vanadium Carbides

被引:14
作者
Camargo, Luis G. B. [1 ]
Palazzo, Benjamin G. [2 ]
Taylor, Greg [2 ]
Norris, Zach A. [2 ]
Patel, Yash K. [1 ]
Hettinger, Jeffrey D. [2 ,3 ]
Yu, Lei [1 ]
机构
[1] Rowan Univ, Dept Chem & Biochem, Glassboro, NJ 08028 USA
[2] Rowan Univ, Dept Phys & Astron, Glassboro, NJ 08028 USA
[3] Rowan Univ, Dept Biomed & Translat Sci, Glassboro, NJ 08028 USA
关键词
SUPERCAPACITORS; PERFORMANCE; FILMS; SIZE;
D O I
10.1149/2.0031512jes
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Carbide-derived Carbon (CDC) has been demonstrated to be an excellent electrode material for electrochemical devices including supercapacitors due to its chemical and electrochemical stability, large specific surface area and controllable pore size and morphology. Currently, CDC is prepared from metal carbides by chlorination in a chlorine gas atmosphere at temperatures of 350 degrees C or higher. In this paper, conversion using electrochemical methods is reported, which can be achieved by oxidizing vanadium carbides (VC or V2C) in aqueous solutions at room temperature and a mild electrode potential to prepare CDC thin film as electrode materials for "on-chip" supercapacitiors. It was found that VC and V2C can both be oxidized at a potential of about 0.4 V vs. Ag/AgCl or higher in neutral, acidic, or basic solutions. After the oxidation, vanadium is readily detected in the electrolyte solutions by ICP-MS (Inductively Coupled Plasma - Mass Spectrometry). The so-produced CDC thin film electrode (ca. 2.0 - 2.6 mu m thick) has a porous morphology and bears specific double layer capacitance values as high as 0.026 F.cm(-2) (or 130 F.cm(-3)) with some dependence on the oxidation potential, time, and electrolyte solutions. (C) The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. All rights reserved.
引用
收藏
页码:H811 / H815
页数:5
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