Tunable quantum capacitance and magnetic oscillation in bilayer graphene device

被引：1

作者：

Liu, Chuan

Zhu, Jia-Lin ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

PHYSICS LETTERS A | 2013年 / 377卷 / 41期

关键词：

Quantum capacitance; Bilayer graphene; Magnetic field; Spin-orbit interaction;

D O I：

10.1016/j.physleta.2013.09.006

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We address the quantum capacitance of a bilayer graphene device in the presence of Rashba spin-orbit interaction (SOI) by applying external magnetic fields and interlayer biases. Quantum capacitance reflects the mixing of the spin-up and spin-down states of Landau levels and can be effectively modulated by the interlayer bias. The interplay between interlayer bias and Rashba SOI strongly affects magnetic oscillations. The typical beating pattern changes tuned by Rashba SOI strength, interlayer bias energy, and temperature are examined as well. (C) 2013 Elsevier B.V. All rights reserved.

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页码：2966 / 2969

页数：4

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