Infrared absorption in Si-Si1-xGex-Si quantum wells

被引:0
|
作者
Fishman, G [1 ]
Oszwaldowski, R [1 ]
机构
[1] UMK,INST PHYS,PL-87100 TORUN,POLAND
关键词
D O I
10.12693/APhysPolA.92.753
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We use the eight-band k.p model to describe the infrared inter-subband absorption in Si-Si1-xGex-Si quantum wells, which takes explicitly into account the Gamma'(25)(Gamma(8)(+) + Gamma(7)(+) in the double group) valence band and the second conduction band Gamma(2)'(Gamma(7)(-)). We then obtain an accurate description of mixing of the S wave function with the valence band functions.
引用
收藏
页码:753 / 756
页数:4
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