Dielectric and multiferroic properties of 0.75BiFeO3-0.25BaTiO3 solid solution

被引:33
作者
Kumar, Manish [1 ,2 ]
Shankar, S. [3 ]
Parkash, Om [2 ]
Thakur, O. P. [3 ]
机构
[1] Univ Delhi, ARSD Coll, Dept Phys, New Delhi 110021, India
[2] IIT BHU, Dept Ceram Engn, Varanasi 221005, Uttar Pradesh, India
[3] NSIT, Sch Appl Sci, New Delhi 110078, India
关键词
BaTiO3; BiFeO3; Barium Titanate; Morphotropic Phase Boundary; Cole Plot;
D O I
10.1007/s10854-013-1661-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Solid solution 0.75BiFeO(3)-0.25BaTiO(3) (BFO-25 % BT) was prepared by solid state reaction method. Powder X-ray diffraction showed the morphotropic phase boundary (MPB) with the coexistence of both rhombohedral and cubic phases due to splitting in the line at 2 theta = 39.7A degrees. Scanning electron micrographs indicated that the ceramic has compact and uniform microstructure with average grain size < 3 mu m. The polarization vs applied electric field analysis showed an unsaturated hysteresis loop with the remnant polarization 12.95 mu C/cm(2) at 22 kV/cm for 0.75BiFeO(3)-0.25BaTiO(3) ceramic. The calculations of diffuse parameter i.e. slope gamma = 1.63 suggested a high degree of diffusion in BFO-BT lattice. The room temperature magnetic measurements confirmed the weak ferromagnetism of magnetization similar to 0.1 emu/gm at an applied magnetic field of H = 5 kOe for 0.75BiFeO(3)-0.25BaTiO(3) ceramic. The high temperature magnetic and dielectric analysis suggested a coupling between ferroelectric and magnetic parameters near the antiferromagnetic-paramagnetic transition T-c similar to 310 A degrees C, which was responsible for the broad frequency dependent dielectric maxima. The impedance spectroscopy and complex modulus analysis confirmed the conventional relaxor, NTCR (negative temperature coefficient of resistance), giant ferroelectricity and polydispersive non-Debye type dielectric relaxation behaviour for 0.75BiFeO(3)-0.25BaTiO(3) ceramic at 170 A degrees C on 1 kHz with activation energy 2.33 eV. The modulus analysis also confirmed the possibility of hopping mechanism for electrical transport process in material.
引用
收藏
页码:888 / 896
页数:9
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