Mixed Particle Field Influence on RadFET Responses Using Co-60 Calibration

被引：17

作者：

Mekki, J. ^{[1
]}

Brugger, M. ^{[1
]}

Danzeca, S. ^{[1
,2
]}

Dusseau, L. ^{[2
]}

Roed, K. ^{[3
]}

Spiezia, G. ^{[1
]}

机构：

[1] CERN, European Org Nucl Res, CH-1211 Geneva 23, Switzerland

[2] Univ Montpellier 2, IES, F-34090 Montpellier, France

[3] Univ Oslo, N-0316 Oslo, Norway

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 04期

关键词：

Field effect transistors; gamma rays; ionizing radiation sensors; particle accelerators; protons; radiation monitoring; MOS DEVICES; SENSORS;

D O I：

10.1109/TNS.2013.2253800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RadFET sensors are used for Total Ionizing Dose (TID) monitoring inside CERN accelerators. While RadFET sensors are typically well characterized with a Co-60 gamma source, their radiation response can be affected when they are used in high-energy mixed particle fields. This paper presents experimental results and corresponding discussions on the effect of CERN accelerator-like environments on the dose measured by 100 nm, 400 nm and 1000 nm thick oxide RadFETs. Simulations of the radiation environment at the CERN test areas have also been performed to investigate the contribution of each particle type to the deposited dose and are used as a tool to understand the observed effects.

引用

页码：2435 / 2443

页数：9

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