Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer

被引：23

作者：

Galiev, G. B. ^{[1
]}

Vasil'evskii, I. S. ^{[2
]}

Pushkarev, S. S. ^{[1
,2
]}

Klimov, E. A. ^{[1
]}

Imamov, R. M. ^{[3
]}

Buffat, P. A. ^{[4
]}

Dwir, B. ^{[5
]}

Suvorova, E. I. ^{[3
]}

机构：

[1] Russian Acad Sci, Inst Ultrahigh Frequency Semicond Elect, Moscow 117901, Russia

[2] Natl Res Nucl Univ MEPhI, Moscow, Russia

[3] Russian Acad Sci, AV Shubnikov Crystallog Inst, Moscow 117901, Russia

[4] Ecole Polytech Fed Lausanne, Ctr Interdisciplinaire Microscopie Elect, CH-1015 Lausanne, Switzerland

[5] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 366卷

基金：

俄罗斯基础研究基金会;

关键词：

Dislocations; Molecular beam epitaxy; Quantum wells; Strained superlattices; Metamorphic buffer; Semiconducting indium gallium arsenide; Semiconducting indium aluminum arsenide; High electron mobility transistors; MOLECULAR-BEAM EPITAXY; GAAS; DISLOCATIONS; GROWTH; LAYER;

D O I：

10.1016/j.jcrysgro.2012.12.017

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Metamorphic InxAl1-xAs buffer design features influence on electrophysical and structural properties of the heterostructures was investigated. Two types of MHEMT heterostructures In0.70Al0.30As/In0.76Ga0.24As with novel design contained inverse steps or strained superlattices were grown by MBE on GaAs substrates. Electrophysical properties of the heterostructures were characterized by Hall measurements, while the structural features were described with the help of different transmission electron microscopy techniques. The metamorphic HEMT with strained superlattices inserted in the metamorphic buffer had the smoother surface and more defect-free crystal structure, as well as a higher Hall mobility, than metamorphic HEMT with inverse steps within the metamorphic buffer. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：55 / 60

页数：6

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