Development of SiO2 Dielectric Thin Film Prepared by the Low-temperature Solution Process

We have developed a technique to fabricate a silicon dioxide (SiO2) dielectric thin film by the low temperature solution process. The thin film prepared below 170 degrees C showed excellent dielectric performance with high resistivity in the order of 10(16) ohm cm and very flat surface with the same as thermal oxidized SiO2 thin film on the silicon wafer. It is shown that the relationship between the thickness of the coated film and their conversion into SiO2. Furthermore, it is showed that the thicker film of SiO2 with high dielectric performance and surface flatness is produced by the built-up technique of ultrathin films.