Microscopic linear Hall probe arrays

被引：5
作者：
Cambel, V
Elias, P
Kudela, R
Durica, M
Novak, J
机构：
[1] Institute of Electrical Engineering, Slovak Academy of Sciences, 842 39 Bratislava
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 13期
关键词：
Hall effect devices; sensors; semiconductor devices;
D O I：
10.1049/el:19960774
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A linear Hall probe array, with an active area of 2 x 2 mu m(2) and a 4 mu m centre-to-centre separation is presented. Electronics were developed to eliminate residual voltages up to 8OmV at bias current 2mA. The Hail array exibited linear dependences (better than 0.1%) of the Hall voltage against magnetic field +/-0.1T at 300K for pulse bias current 2mA.
引用
收藏
页码：1236 / 1237
页数：2
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