Feasibility study for sidewall fluorination of SWCNTs in CF4 plasma

被引：9

作者：

Shoda, K. ^{[1
]}

Kohno, H. ^{[1
]}

Kobayashi, Y. ^{[2
]}

Takagi, D. ^{[3
]}

Takeda, S. ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Sci, Dept Phys, Osaka 5600043, Japan

[2] NTT Corp, NTT, Basic Res Labs, Kanagawa 2430198, Japan

[3] Tokyo Univ Sci, Dept Phys, Tokyo 1628601, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 11期

关键词：

D O I：

10.1063/1.3040700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fluorination of single-wall carbon nanotubes (SWCNTs) was performed by using the CF4 radio-frequency plasma technique. The structural and bonding properties of the plasma- processed SWCNTs were investigated by transmission electron microscopy, x-ray photoelectron spectroscopy, and Raman spectroscopy. The plasma parameters, i.e., self-biased voltage, plasma ion density, and ion dose, substantially affected the structural and bonding properties of plasma- processed SWCNTs. We show that sidewall fluorination of SWCNTs occurs in CF4 plasma at low self-biased voltages. Plasma conditions for the sidewall fluorination of SWCNTs are discussed. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3040700]

引用

页数：6

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