Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

被引：27

作者：

Lee, In-Yeal ^{[1
]}

Park, Hyung-Youl ^{[1
]}

Park, Jin-Hyung ^{[1
]}

Lee, Jinyeong ^{[2
]}

Jung, Woo-Shik ^{[3
]}

Yu, Hyun-Yong ^{[4
]}

Kim, Sang-Woo ^{[2
]}

Kim, Gil-Ho ^{[1
]}

Park, Jin-Hong ^{[1
]}

机构：

[1] Sungkyunkwan Univ, SKKU Samsung Graphene Ctr, SKKU Adv Inst Nanotechnol SAINT, Sch Elect & Elect Engn, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, SKKU Samsung Graphene Ctr, SKKU Adv Inst Nanotechnol SAINT, Sch Adv Mat Sci & Engn,Ctr Human Interface Nanote, Suwon 440746, South Korea

[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[4] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

ORGANIC ELECTRONICS | 2013年 / 14卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

Graphene; N-doping; Hydrazine; Inverter;

D O I：

10.1016/j.orgel.2013.03.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4-H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p-and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated. (C) 2013 Elsevier B. V. All rights reserved.

引用

页码：1586 / 1590

页数：5

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