Magnetic semiconductor quantum wells in high fields to 60 Tesla: Photoluminescence linewidth annealing at magnetization steps

被引：40
作者：
Crooker, SA
Rickel, DG
Lyo, SK
Samarth, N
Awschalom, DD
机构：
[1] Natl High Magnet Field Lab, Los Alamos, NM 87545 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
[3] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[4] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
来源：
PHYSICAL REVIEW B | 1999年 / 60卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.60.R2173
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Magnetic semiconductors offer a unique possibility for strongly tuning the intrinsic alloy disorder potential with applied magnetic field. We report the direct observation of a series of steplike reductions in the magnetic alloy disorder potential in single ZnSe/Zn(Cd,Mn)Se quantum wells between 0 and 60 T. This disorder, measured through the linewidth of low-temperature photoluminescence spectra, drops abruptly at similar to 19, 36, and 53 T, in concert with observed magnetization steps. Conventional models of alloy disorder (developed for nonmagnetic semiconductors) reproduce the general shape of the data, but markedly underestimate the size of the linewidth reduction. [S0163-1829(99)50328-7].
引用
收藏
页码：R2173 / R2176
页数：4
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