Effect of randomly distributed asymmetric stone-wales defect on electronic and transport properties of armchair graphene nanoribbon

By applying tight binding model, we investigate the electronic and transport properties of randomly distributed Stone-Wales (SW) defects on an armchair graphene nanoribbon (AGNR). We use four different functions, as distribution functions, to generate our SW defected nanoribbons. It is found that defect density can have a major effect on the conductance of our defected system, whilst other configurations such as defect orientation will contribute less. In our investigations, some special geometries are found which shows interesting electronic and transport properties. These special cases along with the other data provided can be used to engineer band gap, electronic properties and transport properties of graphene nanoribbons to meet a desired purpose.