Remarkable breakdown voltage enhancement in AlGaN channel HEMTs

被引：23

作者：

Nanjo, Takuma ^{[1
]}

Takeuchi, Misaichi ^{[1
,2
,3
]}

Suita, Muneyoshi ^{[1
]}

Abe, Yuji ^{[1
]}

Oishi, Toshiyuki ^{[1
]}

Tokuda, Yasunori ^{[1
]}

Aoyagi, Yoshinobu ^{[1
,2
,3
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol Res & Dev Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan

[2] RIKEN, Nanosci Dev, Wako, Saitama 3510198, Japan

[3] Tokyo Inst Technol, Dept Elect & Appl Phys, Midori Ku, Kanagawa 2268502, Japan

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4418956

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrated a remarkable breakdown voltage enhancement in a new high-electron-mobility transistor (HEMT) with a wider bandgap AlGaN channel layer. A Si ion implantation doping technique was utilized to achieve sufficiently low resistive source/drain contacts. The obtained maximum breakdown voltage was 1650 V with a gate-drain distance of 10 mu m. This result is very promising for the further higher-power operation of high-frequency HEMTs.

引用

页码：397 / +

页数：2

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