High Temperature Silicon Carbide Power Modules for High Performance Systems

被引：2

作者：

Lostetter, A. B. ^{[1
]}

Hornberger, J. ^{[1
]}

McPherson, B. ^{[1
]}

Bourne, J. ^{[1
]}

Shaw, R. ^{[1
]}

Cilio, E. ^{[1
]}

Cilio, W. ^{[1
]}

Reese, B. ^{[1
]}

Heinrichs, E. ^{[1
]}

McNutt, T. ^{[1
]}

Schupbach, M. ^{[1
]}

机构：

[1] Arkansas Power Elect Int Inc, Fayetteville, AR 72701 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

Power module; High power; Low parasitic; Hermetically sealed; High performance; High reliability;

D O I：

10.4028/www.scientific.net/MSF.717-720.1219

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The demands of modern high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of silicon carbide (SiC) are well known, including high temperature operation, high voltage blocking capability, high speed switching, and high energy efficiency. In this discussion, APEI, Inc. presents two newly developed high performance SiC power modules for extreme environment systems and applications. These power modules are rated to 1200V, are operational at currents greater than 100A, can perform at temperatures in excess of 250 degrees C, and are designed to house various SiC devices, including MOSFETs, JFETs, or BJTs.

引用

页码：1219 / 1224

页数：6

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