Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

被引：11

作者：

Kundys, D. ^{[1
]}

Schulz, S. ^{[2
]}

Oehler, F. ^{[3
]}

Sutherland, D. ^{[1
]}

Badcock, T. J. ^{[1
]}

Dawson, P. ^{[1
]}

Kappers, M. J. ^{[3
]}

Oliver, R. A. ^{[3
]}

Humphreys, C. J. ^{[3
]}

机构：

[1] Univ Manchester, Photon Sci Inst, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

[2] Tyndall Natl Inst, Photon Theory Grp, Cork, Ireland

[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 11期

基金：

爱尔兰科学基金会; 英国工程与自然科学研究理事会;

关键词：

STACKING-FAULTS; GAN;

D O I：

10.1063/1.4868692

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed a detailed study of the impact of basal plane stacking faults (BSFs) on the optical properties of both a-plane InGaN/GaN quantum wells (QWs) and GaN template samples grown on r-sapphire. In particular, we have used polarised photoluminescence excitation spectroscopy (P-PLE) to investigate the nature of the low temperature recombination as well as extracting information on the valence band (VB) polarisation anisotropy. Our low temperature P-PLE results revealed not only excitons associated with intersubband quantum well transitions and the GaN barrier material but also a transition associated with creation of excitons in BSFs. The strength of this BSF transition varied with detection energy across the quantum well emission suggesting that there is a significant contribution to the emission line width from changes in the local electronic environment of the QWs due to interactions with BSFs. Furthermore, we observed a corresponding progressive increase in the VB splitting of the QWs as the detection energy was varied across the quantum well emission spectrum. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 20 条

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