Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

被引：11
作者：
Kundys, D. [1 ]
Schulz, S. [2 ]
Oehler, F. [3 ]
Sutherland, D. [1 ]
Badcock, T. J. [1 ]
Dawson, P. [1 ]
Kappers, M. J. [3 ]
Oliver, R. A. [3 ]
Humphreys, C. J. [3 ]
机构：
[1] Univ Manchester, Photon Sci Inst, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
[2] Tyndall Natl Inst, Photon Theory Grp, Cork, Ireland
[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 11期
基金：
英国工程与自然科学研究理事会; 爱尔兰科学基金会;
关键词：
STACKING-FAULTS; GAN;
D O I：
10.1063/1.4868692
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have performed a detailed study of the impact of basal plane stacking faults (BSFs) on the optical properties of both a-plane InGaN/GaN quantum wells (QWs) and GaN template samples grown on r-sapphire. In particular, we have used polarised photoluminescence excitation spectroscopy (P-PLE) to investigate the nature of the low temperature recombination as well as extracting information on the valence band (VB) polarisation anisotropy. Our low temperature P-PLE results revealed not only excitons associated with intersubband quantum well transitions and the GaN barrier material but also a transition associated with creation of excitons in BSFs. The strength of this BSF transition varied with detection energy across the quantum well emission suggesting that there is a significant contribution to the emission line width from changes in the local electronic environment of the QWs due to interactions with BSFs. Furthermore, we observed a corresponding progressive increase in the VB splitting of the QWs as the detection energy was varied across the quantum well emission spectrum. (C) 2014 AIP Publishing LLC.
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页数：4
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  • [1] Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells
    Badcock, T. J.
    Hao, R.
    Moram, M. A.
    Kappers, M. J.
    Dawson, P.
    Oliver, R. A.
    Humphreys, C. J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 112 (01)
  • [2] The effect of indium concentration on the optical properties of a-plane InGaN/GaN quantum wells grown on r-plane sapphire substrates
    Badcock, T. J.
    Hao, R.
    Moram, M. A.
    Dawson, P.
    Kappers, M. J.
    Humphreys, C. J.
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (07): : 1529 - 1531
  • [3] Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates
    Badcock, T. J.
    Dawson, P.
    Kappers, M. J.
    McAleese, C.
    Hollander, J. L.
    Johnston, C. F.
    Rao, D. V. Sridhara
    Sanchez, A. M.
    Humphreys, C. J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)
  • [4] Cubic inclusions in hexagonal AlN, GaN, and InN: Electronic states
    Belabbes, A.
    de Carvalho, L. C.
    Schleife, A.
    Bechstedt, F.
    [J]. PHYSICAL REVIEW B, 2011, 84 (12)
  • [5] Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions
    Chiu, C. H.
    Kuo, S. Y.
    Lo, M. H.
    Ke, C. C.
    Wang, T. C.
    Lee, Y. T.
    Kuo, H. C.
    Lu, T. C.
    Wang, S. C.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (06)
  • [6] Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
    Corfdir, P.
    Lefebvre, P.
    Levrat, J.
    Dussaigne, A.
    Ganiere, J. -D.
    Martin, D.
    Ristic, J.
    Zhu, T.
    Grandjean, N.
    Deveaud-Pledran, B.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (04)
  • [7] Large optical polarization anisotropy due to anisotropic in-plane strain in m-plane GaInN quantum well structures grown on m-plane 6H-SiC
    Joenen, H.
    Bremers, H.
    Langer, T.
    Rossow, U.
    Hangleiter, A.
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (15)
  • [8] Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells
    Joenen, H.
    Rossow, U.
    Bremers, H.
    Hoffmann, L.
    Brendel, M.
    Draeger, A. D.
    Schwaiger, S.
    Scholz, F.
    Thalmair, J.
    Zweck, J.
    Hangleiter, A.
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (01)
  • [9] Morphological study of non-polar (11-20) GaN grown on r-plane (1-102) sapphire
    Johnston, C. F.
    Kappers, M. J.
    Barnard, J. S.
    Humphreys, C. J.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1786 - 1788
  • [10] Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire
    Johnston, C. F.
    Kappers, M. J.
    Moram, M. A.
    Hollander, J. L.
    Humphreys, C. J.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2009, 311 (12) : 3295 - 3299
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