Rapid measurement of substrate temperatures by frequency-domain low-coherence interferometry

被引：13
|
作者：
Tsutsumi, Takayoshi [1 ]
Ohta, Takayuki [2 ]
Ishikawa, Kenji [1 ]
Takeda, Keigo [1 ]
Kondo, Hiroki [1 ]
Sekine, Makoto [1 ]
Hori, Masaru [1 ]
Ito, Masafumi [2 ]
机构：
[1] Nagoya Univ, Dept Elect Engn & Comp Sci, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Meijo Univ, Dept Elect & Elect Engn, Fac Sci & Technol, Tenpaku Ku, Nagoya, Aichi 4688502, Japan
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 18期
关键词：
WAFER; RADICALS; SILICON; THERMOMETRY; FILMS;
D O I：
10.1063/1.4827426
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Rapid high-precision temperature monitoring systems for silicon wafers applicable even during plasma processing have been developed using frequency-domain low-coherence interferometry without a reference mirror. It was found to have a precision of 0.04 degrees C, a response time of 1 ms, and a large tolerance to mechanical vibrations and fiber vending when monitoring the temperature of commercial Si wafers. The performance is a substantial improvement over the previous precision of 0.11 degrees C measured in a few seconds using a time-domain method. It is, therefore, a powerful real-time technique to monitor rapidly varying wafer temperatures with high precision. (C) 2013 AIP Publishing LLC.
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页数：3
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