Rapid measurement of substrate temperatures by frequency-domain low-coherence interferometry

被引：13

作者：

Tsutsumi, Takayoshi ^{[1
]}

Ohta, Takayuki ^{[2
]}

Ishikawa, Kenji ^{[1
]}

Takeda, Keigo ^{[1
]}

Kondo, Hiroki ^{[1
]}

Sekine, Makoto ^{[1
]}

Hori, Masaru ^{[1
]}

Ito, Masafumi ^{[2
]}

机构：

[1] Nagoya Univ, Dept Elect Engn & Comp Sci, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Meijo Univ, Dept Elect & Elect Engn, Fac Sci & Technol, Tenpaku Ku, Nagoya, Aichi 4688502, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 18期

关键词：

WAFER; RADICALS; SILICON; THERMOMETRY; FILMS;

D O I：

10.1063/1.4827426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rapid high-precision temperature monitoring systems for silicon wafers applicable even during plasma processing have been developed using frequency-domain low-coherence interferometry without a reference mirror. It was found to have a precision of 0.04 degrees C, a response time of 1 ms, and a large tolerance to mechanical vibrations and fiber vending when monitoring the temperature of commercial Si wafers. The performance is a substantial improvement over the previous precision of 0.11 degrees C measured in a few seconds using a time-domain method. It is, therefore, a powerful real-time technique to monitor rapidly varying wafer temperatures with high precision. (C) 2013 AIP Publishing LLC.

引用

页数：3

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