Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application

被引：66

作者：

Fuh, Chur-Shyang ^{[1
,2
]}

Liu, Po-Tsun ^{[3
,4
]}

Teng, Li-Feng ^{[3
,5
]}

Huang, Sih-Wei ^{[3
,4
]}

Lee, Yao-Jen ^{[6
]}

Shieh, Han-Ping D. ^{[3
,4
]}

Sze, Simon M. ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[4] Natl Chiao Tung Univ, Display Inst, Hsinchu 30010, Taiwan

[5] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[6] Natl Nano Device Labs, Hsinchu 30010, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 09期

关键词：

Flexible thin-film transistor (TFT); In-Ga-Zn-O thin-film transistor (IGZO TFT); postannealing;

D O I：

10.1109/LED.2013.2272311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, microwave annealing technology is proposed to reduce thermal budget for the manufacture of transparent conductive oxide thin-film transistor (TFT). With microwave annealing, a nitrogenated amorphous In-Ga-Zn-O (a-IGZO:N) TFT fabricated on glass panel behaves as a carrier mobility of 4.21 cm(2)/V s and threshold voltage of 2.91 V. The performance of microwave-treated a-IGZO: N TFT with annealing process duration of 300 s is well competitive with its counterpart treated by thermal furnace annealing at 350 C for 1 h. Owing to its low thermal budget and selective heating to materials of interest, the microwave annealing has great potential for flexible oxide TFT applications.

引用

页码：1157 / 1159

页数：3

共 15 条

[1] High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates [J].

Chien, Chih-Wei ;

Wu, Cheng-Han ;

Tsai, Yu-Tang ;

Kung, Yen-Cheng ;

Lin, Chang-Yu ;

Hsu, Po-Ching ;

Hsieh, Hsing-Hung ;

Wu, Chung-Chih ;

Yeh, Yung-Hui ;

Leu, Chyi-Ming ;

Lee, Tzong-Ming .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (05) :1440-1446

[2] Role of environmental and annealing conditions on the passivation-free in-Ga-Zn-O TFT [J].

Fuh, Chur-Shyang ;

Sze, Simon Min ;

Liu, Po-Tsun ;

Teng, Li-Feng ;

Chou, Yi-Teh .

THIN SOLID FILMS, 2011, 520 (05) :1489-1494

[3]

Groza J. R., 2011, J MATER RES, V7, P2643

[4] Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors [J].

Hoshino, Ken ;

Hong, David ;

Chiang, Hai Q. ;

Wager, John F. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (07) :1365-1370

[5] Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer [J].

Huang, Xiaoming ;

Wu, Chenfei ;

Lu, Hai ;

Ren, Fangfang ;

Chen, Dunjun ;

Zhang, Rong ;

Zheng, Youdou .

APPLIED PHYSICS LETTERS, 2013, 102 (19)

[6] Density-of-States Modeling of Solution-Processed InGaZnO Thin-Film Transistors [J].

Kim, Chang Eun ;

Cho, Edward Namkyu ;

Moon, Pyung ;

Kim, Gun Hee ;

Kim, Dong Lim ;

Kim, Hyun Jae ;

Yun, Ilgu .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (10) :1131-1133

[7] Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers [J].

Liu, Po-Tsun ;

Chou, Yi-Teh ;

Teng, Li-Feng ;

Li, Fu-Hai ;

Fuh, Chur-Shyang ;

Shieh, Han-Ping D. .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) :1397-1399

[8]

Liu P, 2011, ADV COMMUN TECHNOL, V1, P1, DOI 10.1109/PLASMA.2011.5993125

[9] The Effects of Mechanical Bending and Illumination on the Performance of Flexible IGZO TFTs [J].

Muenzenrieder, Niko ;

Cherenack, Kunigunde H. ;

Troester, Gerhard .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (07) :2041-2048

[10] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

← 1 2 →