Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

被引：120
作者：
Bahat-Treidel, Eldad [1 ]
Hilt, Oliver [1 ]
Brunner, Frank [1 ]
Wuerfl, Joachim [1 ]
Traenkle, Guenther [1 ]
机构：
[1] Ferdinand Braun Inst, D-12489 Berlin, Germany
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 12期
关键词：
AlGaN/GaN high-electron-mobility transistor (HFMT); breakdown voltage; double heterojunction (DH); gate recess; punchthrough voltage; scale-up;
D O I：
10.1109/TED.2008.2006891
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present an enhancement of punchthrough voltage in AlGaN/GaN high-electron-mobility-transistor devices by increasing the electron confinement in the transistor channel using an AlGaN buffer-layer structure. An optimized electron confinement results in a scaling of punchthrough voltage with device geometry and a significantly reduced subthreshold drain leakage current. These beneficial properties are pronounced even further if gate-recess technology is applied for device fabrication. Physical-based device simulations give insight in the respective electronic mechanisms.
引用
收藏
页码：3354 / 3359
页数：6
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共 21 条
  • [11] Enhanced electron mobility in AlGaN/InGaN/AlGaN double-heterostructures by piezoelectric effect
    Maeda, N
    Saitoh, T
    Tsubaki, K
    Nishida, T
    Kobayashi, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (7B): : L799 - L801
  • [12] Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors
    Maeda, N
    Saitoh, T
    Tsubaki, K
    Nishida, T
    Kobayashi, N
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (21) : 3118 - 3120
  • [13] Two-dimensional electron gas transport properties in AlGaN/GaN single- and double-heterostructure field effect transistors
    Maeda, N
    Saitoh, T
    Tsubaki, K
    Nishida, T
    Kobayashi, N
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 232 - 237
  • [14] GaN Double Heterojunction Field Effect Transistor for microwave and millimeterwave power applications
    Micovic, M
    Hashimoto, P
    Hu, M
    Milosavljevic, I
    Duvall, J
    Willadsen, PJ
    Wong, WS
    Conway, AM
    Kurdoghlian, A
    Deelman, PW
    Moon, JS
    Schmitz, A
    Delaney, MJ
    [J]. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 807 - 810
  • [15] ATOMIC GEOMETRY AND ELECTRONIC-STRUCTURE OF NATIVE DEFECTS IN GAN
    NEUGEBAUER, J
    VAN DE WALLE, CG
    [J]. PHYSICAL REVIEW B, 1994, 50 (11): : 8067 - 8070
  • [16] Screw dislocations in GaN: The Ga-filled core model
    Northrup, JE
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (16) : 2288 - 2290
  • [17] High breakdown voltage AlGaN-GaN Power-HEMT design and high current density switching behavior
    Saito, W
    Takada, Y
    Kuraguchi, M
    Tsuda, K
    Omura, I
    Ogura, T
    Ohashi, H
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) : 2528 - 2531
  • [18] AlGaN/InGaN/GaN double heterostructure field-effect transistor
    Simin, G
    Hu, XH
    Tarakji, A
    Zhang, JP
    Koudymov, A
    Saygi, S
    Yang, JW
    Khan, A
    Shur, MS
    Gaska, R
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (11A): : L1142 - L1144
  • [19] Surface leakage currents in SiNx′ passivated AlGaN/GaN HFETs
    Tan, WS
    Uren, MJ
    Houston, PA
    Green, RT
    Balmer, RS
    Martin, T
    [J]. IEEE ELECTRON DEVICE LETTERS, 2006, 27 (01) : 1 - 3
  • [20] Punch-through in short-channel AlGaN/GaN HFETs
    Uren, MJ
    Nash, KJ
    Balmer, RS
    Martin, T
    Morvan, E
    Caillas, N
    Delage, SL
    Ducatteau, D
    Grimbert, B
    De Jaeger, JC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (02) : 395 - 398
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