Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

被引：120

作者：

Bahat-Treidel, Eldad ^{[1
]}

Hilt, Oliver ^{[1
]}

Brunner, Frank ^{[1
]}

Wuerfl, Joachim ^{[1
]}

Traenkle, Guenther ^{[1
]}

机构：

[1] Ferdinand Braun Inst, D-12489 Berlin, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 12期

关键词：

AlGaN/GaN high-electron-mobility transistor (HFMT); breakdown voltage; double heterojunction (DH); gate recess; punchthrough voltage; scale-up;

D O I：

10.1109/TED.2008.2006891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present an enhancement of punchthrough voltage in AlGaN/GaN high-electron-mobility-transistor devices by increasing the electron confinement in the transistor channel using an AlGaN buffer-layer structure. An optimized electron confinement results in a scaling of punchthrough voltage with device geometry and a significantly reduced subthreshold drain leakage current. These beneficial properties are pronounced even further if gate-recess technology is applied for device fabrication. Physical-based device simulations give insight in the respective electronic mechanisms.

引用

页码：3354 / 3359

页数：6

共 21 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Ambacher, O
Smart, J
Shealy, JR
Weimann, NG
Chu, K
Murphy, M
Schaff, WJ
Eastman, LF
Dimitrov, R
Wittmer, L
Stutzmann, M
Rieger, W
Hilsenbeck, J
[J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) : 3222 - 3233
[2] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Ambacher, O
Foutz, B
Smart, J
Shealy, JR
Weimann, NG
Chu, K
Murphy, M
Sierakowski, AJ
Schaff, WJ
Eastman, LF
Dimitrov, R
Mitchell, A
Stutzmann, M
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) : 334 - 344
[3] [Anonymous], ATLAS US MAN DEV SIM
[4] AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors
Chen, CQ
Zhang, JP
Adivarahan, V
Koudymov, A
Fatima, H
Simin, G
Yang, J
Khan, MA
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (25) : 4593 - 4595
[5] High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance
Choi, Y. C.
Pophristic, M.
Peres, B.
Cha, H-Y
Spencer, M. G.
Eastman, L. F.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (05) : 517 - 521
[6] WIDE BANDGAP COMPOUND SEMICONDUCTORS FOR SUPERIOR HIGH-VOLTAGE UNIPOLAR POWER DEVICES
CHOW, TP
TYAGI, R
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (08) : 1481 - 1483
[7] Effects of traps formed by threading dislocations on off-state breakdown characteristics in GaN buffer layer in AlGaN/GaN heterostructure field-effect transistors
Hinoki, Akihiro
Kikawa, Junjiroh
Yamada, Tomoyuki
Tsuchiya, Tadayoshi
Kamiya, Shinichi
Kurouchi, Masahito
Kosaka, Kenichi
Araki, Tsutomu
Suzuki, Akira
Nanishi, Yasushi
[J]. APPLIED PHYSICS EXPRESS, 2008, 1 (01)
[8] Polarization engineering on buffer layer in GaN-based heterojunction FETs
Inoue, Takashi
Nakayama, Tatsuo
Ando, Yuji
Kosaki, Masayoshi
Miwa, Hiroshi
Hirata, Koji
Uemura, Toshiya
Miyamoto, Hironobu
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (02) : 483 - 488
[9] Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys
Jena, D
Heikman, S
Green, D
Buttari, D
Coffie, R
Xing, H
Keller, S
DenBaars, S
Speck, JS
Mishra, UK
Smorchkova, I
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (23) : 4395 - 4397
[10] C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE
Kato, Sadahiro
Satoh, Yoshihiro
Sasaki, Hitoshi
Masayuki, Iwami
Yoshida, Seikoh
[J]. JOURNAL OF CRYSTAL GROWTH, 2007, 298 : 831 - 834

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