High temperature resistant interconnection for SiC power devices using Ni micro-electroplating and Ni nano particles

被引：0

作者：

Tatsumi, Kohei ^{[1
]}

Tanaka, Yasunori ^{[1
]}

Iizuka, Tomonori ^{[1
]}

Wada, Keiko ^{[2
]}

Fukumori, Minoru ^{[2
]}

Morisako, Isamu ^{[2
]}

Jeongbin, Yoon ^{[3
]}

Murakawa, Norihiro ^{[2
]}

机构：

[1] Waseda Univ, Grad Sch Informat Prod & Syst, Kitakyushu, Fukuoka, Japan

[2] Waseda Univ, IPS Res Ctr, Kitakyushu, Fukuoka, Japan

[3] Waseda Univ, Grad Sch IPS, Kitakyushu, Fukuoka, Japan

来源：

2018 7TH ELECTRONIC SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE (ESTC) | 2018年

关键词：

SiC; Interconnection; Ni micro-plating; Ni nano-particle; Power module; High temperature reliability;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently there are high expectations for incorporating silicon carbide (SiC) devices as power modules in hybrid electric vehicles (HEV) and electric vehicles (EV). The need fir new bonding technologies, which can deliver high-temperature thermal resistance that replaces solder bonding or Al wire bonding, has been strongly expected in order to maximize the performance of SiC power device. We developed a new micro plating interconnection technology named Nickel Micro Plating Bonding (NMPB) which enables the interconnection in a narrow space between electrodes and SiC devices via our new lead frame formed in chevron shape. As for the bonding strength of NMPB, sufficient joint strength value is confirmed by shear test. We also newly proposed low-temperature nickel nanoparticle sintering to form die bonding connections. We have confirmed that bonding at a bonding temperature of 400 degrees C or lower is possible, and that it is a bonding having long-term high heat resistance. We implemented heat resistant mounting of SiC schottky barrier diode (Slip) on the TO247 type package and confirmed the I-V characteristics even after the high temperature storage at 300 degrees C without any significant degradation. We clarified that these methods had adequate potential as an advanced heat resistant package in comparison with conventional interconnections.

引用

页数：5

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