Electronic structure of ZrX2 (X = Se, Te)

被引:11
作者
Shkvarin, A. S. [1 ]
Merentsov, A. I. [2 ]
Shkvarina, E. G. [1 ]
Yarmoshenko, Yu. M. [1 ]
Pis, I. [3 ,4 ]
Nappini, S. [4 ]
Titov, A. N. [1 ,2 ]
机构
[1] Russian Acad Sci, Ural Branch, MN Miheev Inst Met Phys, Ekaterinburg 620990, Russia
[2] Ural Fed Univ, Ekaterinburg 620089, Russia
[3] Elettra Sincrotrone Trieste SCpA, SS 14,Km 163-5, I-34149 Trieste, Italy
[4] CNR, IOM, Lab TASC, SS 14,Km 163-5, I-34149 Trieste, Italy
基金
俄罗斯科学基金会;
关键词
TRANSITION-METAL DICHALCOGENIDES; OPTICAL-PROPERTIES; PHOTOEMISSION; SPECTRA; OXIDES; CR;
D O I
10.1063/1.5019316
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electronic structure of the ZrX2 (X = Se, Te) compounds has been studied using photoelectron, resonant photoelectron and X-ray absorption spectroscopy, theoretical calculations of the X-ray absorption spectra, and density of electronic states. It was found that the absorption spectra and valence band spectra are influenced by the chalcogen type. The results of the multiplet calculation of the Zr4+ atom show that the change in the splitting in the crystal field, which is described by the 10Dq parameter, is due to the change in the ratio of covalent and ionic contributions to the chemical bond. The resonance band near the Fermi level in the valence band spectra is observed for ZrTe2 in the Zr 3p-4d resonant excitation mode. The extent of photon energy indicates the charge localization on the Zr atom. Similar resonance band for ZrSe2 is absent; it indicates the presence of a gap at the Fermi level. Published by AIP Publishing.
引用
收藏
页数:7
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