X-ray excited luminescence of Ga- and In-doped ZnO microrods by annealing treatment

被引：12

作者：

Li, Qianli ^{[1
]}

Liu, Xiaolin ^{[1
]}

Gu, Mu ^{[1
]}

Huang, Shiming ^{[1
]}

Zhang, Juannan ^{[1
]}

Ni, Chen ^{[1
]}

Liu, Bo ^{[1
]}

Hu, Yahua ^{[1
]}

Wu, Qiang ^{[1
]}

Zhao, Shuning ^{[1
]}

机构：

[1] Tongji Univ, Sch Phys Sci & Engn, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 98卷

基金：

中国国家自然科学基金;

关键词：

Ga- and In-doped ZnO microrods; Hydrothermal process; Annealing treatment; X-ray excited luminescence; NANOSTRUCTURES; SCINTILLATOR; GROWTH;

D O I：

10.1016/j.spmi.2016.09.005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ga- and In-doped ZnO microrods were prepared by low temperature hydrothermal process, and the effect of annealing temperature on morphology, crystallization, photoluminescence and X-ray excited luminescence were deeply researched. The results showed that both Ga- and In-doped ZnO microrods were possessed of a good crystalline quality and exhibited an intense visible emission band with a blue-shift under X-ray excitation. This blue-shift of the visible luminescence could be ascribed to the different contributions of the defect emissions, i.e. the increase in the oxygen vacancy (V-o) emission and the decrease of the oxygen interstitial (O-j) emission. Moreover, a strong ultraviolet luminescence was also obtained by further hydrogen annealing. It is expected that Ga- and In doped microrods are promising candidates for development of fast and high-spatial resolution X-ray imaging detectors. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：351 / 358

页数：8

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