Suppression of tungsten irregular growth in W chemical vapor deposition

被引：1

作者：

Morita, T ^{[1
]}

Harada, Y ^{[1
]}

Oki, H ^{[1
]}

Onoda, H ^{[1
]}

机构：

[1] Oki Elect Ind Co Ltd, LSI Prod Ctr, Hachioji, Tokyo 1938550, Japan

来源：

ISSM 2000: NINTH INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING, PROCEEDINGS | 2000年

关键词：

W-CVD; low temperature;

D O I：

10.1109/ISSM.2000.993641

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

W irregular growth in low temperature W-CVD processes is the most important problem. we succeeded control of W irregular growth by adjusting SiH4/WF6 flow ratio, changing of W deposition sequence cod adhesion layer annealing in reduction gases ambient. This paper describes control of the W irregular growth in low temperature W-CVD processes. In addition, the mechanism of W irregular growth has been studied.

引用

页码：169 / 172

页数：4

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