Tuning the optical absorption performance of MoS2 monolayers with compressive strain

被引:6
|
作者
Zhao, Yibin [1 ]
Du, Zhengwei [1 ]
Wang, Licheng [2 ]
Liu, Mingyan [1 ]
Hu, Xudong [3 ]
Yao, Bing [4 ,5 ]
Li, Xiaoming [3 ]
Gao, Libo [4 ,5 ]
Liu, Cong [2 ]
Wan, Yi [1 ]
Kan, Erjun [1 ]
机构
[1] Nanjing Univ Sci & Technol, Dept Appl Phys, MIIT Key Lab Semicond Microstruct & Quantum Sensin, Nanjing 210094, Peoples R China
[2] Nanjing Univ Sci & Technol, Sch Sci, Civil Engn & Appl Mech Lab, Nanjing 210094, Peoples R China
[3] Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Inst Optoelect & Nanomat, MIIT Key Lab Adv Display Mat & Devices, Nanjing 210094, Peoples R China
[4] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[5] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
PHOTOLUMINESCENCE; BILAYER;
D O I
10.1039/d2nr04362a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Strain engineering has been extensively applied as a promising strategy in the regulation of physical and chemical properties of two-dimensional (2D) materials, which remarkably broadens their application prospects in flexible electronics and chip manufacturing. However, the difficulty in fixing a flexible substrate under compression and the challenge in adjusting the focal distance have hindered the in-depth investigation of compressive strain. Here, we fabricated a home-made strain loading device and proposed a compressive strain measurement method, via which the strain-dependent optical absorption properties of MoS2 monolayers under compression has been studied. According to the measured optical absorption spectra, the first blueshift and then redshift trend under compression was obviously observed. The reliability of the experimentally observed trend in peak position shift was theoretically verified by density functional theory calculation. Our work offers a feasible way to characterize optical properties of 2D materials under compressive strain and expands the space for the development of next-generation micro/nano-scale optoelectronic devices.
引用
收藏
页码:17065 / 17071
页数:7
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