Pb4S3I2-A high-pressure phase in the PbS-PbI2 system

被引:5
作者
Ni, Danrui [1 ]
Guo, Shu [1 ]
Yang, Zoe S. [1 ]
Powderly, Kelly M. [1 ]
Cava, Robert J. [1 ]
机构
[1] Princeton Univ, Dept Chem, Princeton, NJ 08540 USA
基金
美国国家科学基金会;
关键词
Lead chalcogenide halide; High pressure; Single crystal X-ray diffraction; Solid state reaction; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; CRYSTAL-STRUCTURE; SULFIDE; SEMICONDUCTORS; TRANSITION; HALIDES;
D O I
10.1016/j.solidstatesciences.2019.03.012
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The reaction of a stoichiometric ratio of Pb, S and PbI2 at 4 GPa and 600 degrees C yields Pb4S3I2, a compound that has not been reported in the ambient pressure PbS-PbI2 system. Its crystal structure, determined from single crystal X-ray diffraction data, is orthorhombic (space group Pnma) with a = 8.1293(6) angstrom, b = 15.5613(11) angstrom, c = 8.1820(6) angstrom, and Z = 4 at ambient temperature and pressure. The structure consists of sheets of distorted edge-sharing lead-centered polyhedra and saw-tooth-shaped lead-lead bonded chains. Density Functional Theory based band structure calculations suggest Pb4S3I2 to be an indirect band gap semiconductor, and, consistently, a band gap value of approximately 1.6 eV is determined by diffuse reflectance measurements. The material is diamagnetic above 1.8 K.
引用
收藏
页码:49 / 53
页数:5
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