Time-resolved dislocation-related luminescence in strain-relaxed SiGe/Si

被引：6

作者：

Fukatsu, S ^{[1
]}

Mera, Y ^{[1
]}

Inoue, M ^{[1
]}

Maeda, K ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT APPL PHYS,BUNKYO KU,TOKYO 153,JAPAN

来源：

THIN SOLID FILMS | 1997年 / 294卷 / 1-2期

关键词：

silicon; germanium; luminescence; dislocation;

D O I：

10.1016/S0040-6090(96)09290-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Time-resolved photoluminescence (PL) of dislocation-related features (D1-D4) was studied in strain-relaxed molecular beam epitaxy SiGe/Si(100). Low-temperature decay transients are essentially non-exponential for all D bands. The D1, D2 bands are characterized by long (tau > 200 ns) decay times while short (tau < 60 ns) decay times were observed for the D3, D4 bands. Radiative lifetimes as derived from measured decay times imply free-to-bound character of PL origins of the D1, D2 bands while bound-to-bound character for the D3, D4 bands.

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收藏

页码：33 / 36

页数：4

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