Study of IF Bandwidth of MgB Phonon-Cooled Hot-Electron Bolometer Mixers

被引:14
作者
Bevilacqua, Stella [1 ]
Cherednichenko, Sergey [1 ]
Drakinskiy, Vladimir [1 ]
Shibata, Hiroyuki [2 ]
Tokura, Yasuhiro [2 ]
Stake, Jan [1 ]
机构
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, SE-41296 Gothenburg, Sweden
[2] Nippon Telegraph & Tel Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
基金
瑞典研究理事会; 欧洲研究理事会;
关键词
Bolometer; MgB; mixers; gain bandwidth; superconductor; FABRICATION;
D O I
10.1109/TTHZ.2013.2252266
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A noise bandwidth (NBW) of 6-7 GHz was obtained for hot-electron bolometer (HEB) mixers made of 10 nm MgB2 films. A systematic investigation of the (IF) gain bandwidth as a function of the MgB2 film thickness (30, 15, and 10 nm) is also presented. The gain bandwidth (GBW) of 3.4 GHz was measured for a 10 nm film, corresponding to a mixer time constant of 47 ps. For 10 nm films a reduction of the GBW was observed with the reduction of the critical temperature (T-c). Experimental data were analyzed using the two-temperature model. From the theoretical analysis, the electron-phonon time (tau(e-ph)) -, the phonon escape time (tau(esc)) and the electron and phonon specific heats (c(e), c(ph)) were extrapolated giving the first model for HEB mixers of MgB2 films.
引用
收藏
页码:409 / 415
页数:7
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