Combined spectroscopy and electrical characterization of La:BaSnO3 thin films and heterostructures

被引:4
|
作者
Nono Tchiomo, Arnaud P. [1 ,2 ]
Carleschi, Emanuela [1 ]
Prinsloo, Aletta R. E. [1 ]
Sigle, Wilfried [3 ]
van Aken, Peter A. [3 ]
Mannhart, Jochen [3 ]
Ngabonziza, Prosper [1 ,3 ,4 ]
Doyle, Bryan P. [1 ]
机构
[1] Univ Johannesburg, Dept Phys, POB 524,Auckland Pk, ZA-2006 Johannesburg, South Africa
[2] Van Der Waals Zeeman Inst, Inst Phys, Sci Pk 904, NL-1098 XH Amsterdam, Netherlands
[3] Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany
[4] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA
基金
芬兰科学院; 新加坡国家研究基金会;
关键词
X-RAY PHOTOEMISSION; LA-DOPED BASNO3; BAND-GAP; PHOTOELECTRON-SPECTRA; ELECTRONIC-STRUCTURE; MOBILITY; OXIDE; EFFICIENCY; TRANSPORT; SNO2;
D O I
10.1063/5.0105116
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
For La-doped BaSnO3 thin films grown by pulsed laser deposition, we combine chemical surface characterization and electronic transport studies to probe the evolution of electronic states in the band structure for different La-doping contents. Systematic analyses of spectroscopic data based on fitting the core electron line shapes help to unravel the composition of the surface as well as the dynamics associated with increasing doping. These dynamics are observed with a more pronounced signature in the Sn 3d core level, which exhibits an increasing asymmetry to the high binding energy side of the peak with increasing electron density. The present results expand the current understanding of the interplay between the doping concentration, electronic band structure, and transport properties of epitaxial La:BaSnO3 films.
引用
收藏
页数:10
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