Elaboration and characterization of MOCVD (Bi1-x Sbx)2 Te3 thin films

被引：15
|
作者：
Mzerd, A
Aboulfarah, B
Giani, A
Boyer, A
机构：
[1] Univ Med V Agdal, Fac Sci Rabat, Dept Phys, Phys Mat Lab, Rabat, Morocco
[2] Univ Montpellier 2, CNRS, UMR 5507, CEM2, F-34095 Montpellier 5, France
来源：
JOURNAL OF MATERIALS SCIENCE | 2006年 / 41卷 / 05期
关键词：
D O I：
10.1007/s10853-005-2033-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The X-ray diffraction pattern (XRD) (Bi1-xSbx) 2Te3 thin films grown by MOCVD on pyrex substrate at different growth temperatures Tc was presented. The influence of growth temperature on the electrical resistivity measured at room temperature has been investigated. The variation of the component of the resistivity for thin film at Tc=440 and 465°C as a function of absolute temperature T was shown. It was observed that the Seeback coefficient increases from 164 to 240 μV/K when the temperature is increased from 360 to 450°C and the growth rate increases with increasing PV at a constant temperature.
引用
收藏
页码：1659 / 1662
页数：4
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