Femtosecond dynamics of carrier relaxation and exciton formation in Zn1-XCdXSe/ZnSYSe1-Y multiple-quantum-well structures

被引：5
作者：
Tokizaki, T
Sakai, H
Kogano, G
Nakamura, A
机构：
[1] Nagoya Univ, Ctr Integrated Res Sci & Technol, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Dept Appl Phys, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 6A期
关键词：
quantum well; II-VI semiconductor; ultrafast relaxation; intraband relaxation; exciton formation; femtosecond pump and probe method;
D O I：
10.1143/JJAP.38.3562
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the intraband carrier relaxation and exciton formation dynamics in a Zn0.88Cd0.12Se/ZnS0.12Se0.88 multiple quantum well using a femtosecond pump and probe method. We have analyzed the spectral shape Of the exciton absorption band, and obtained the temporal change of the homogeneous broadening. The homogeneous width of the heavy-hole exciton absorption shows the delayed rise of similar to 1 ps and the two-component decay with decay times of similar to 10 ps and similar to 100 ps. These behaviors are dependent on temperature and pumping wavelength. The temporal behavior of the additional broadening has been explained by the numerical simulation, taking into account the intraband carrier relaxation and the exciton formation.
引用
收藏
页码：3562 / 3566
页数：5
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