Junction temperature measurement of InAs quanturn-dot laser diodes by utilizing voltage-temperature method

被引：13

作者：

Jeong, Jung Hwa ^{[1
]}

Kim, Kyoung Chan ^{[1
]}

Lee, Jung Il ^{[1
]}

Kim, Hyun Jae ^{[2
]}

Han, Il Ki ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Nano Device Res Ctr, Seoul 136791, South Korea

[2] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 13-16期

关键词：

forward voltage-temperature (V-T) method; junction temperature; quantum-dot (QD) laser diodes (LDs);

D O I：

10.1109/LPT.2008.926802

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Junction temperature of InAs quantum-dot laser diodes (LDs) is measured by utilizing a forward voltage-temperature method. Although the forward voltage decrease with junction temperature increment is low, the linear relation between forward voltage and temperature clearly occurs. It is found that SiNx is more useful than SiO2 to keep junction temperature low. Injection current to shift the lasing wavelength from ground to excited state is increased over 200 mA by using SiNx instead of SiO2 as the insulating layer. As a result, ground state optical power is doubled. © 2008 IEEE.

引用

页码：1354 / 1356

页数：3

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