Reduction of Lasing Threshold of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Short Cavity Lengths

被引：6
作者：
Wu, Jin-Zhao [1 ]
Long, Hao [1 ]
Shi, Xiao-Ling [1 ]
Ying, Lei-Ying [1 ]
Zheng, Zhi-Wei [1 ]
Zhang, Bao-Ping [1 ]
机构：
[1] Xiamen Univ, Coll Elect Sci & Technol, Dept Elect Engn, Optoelect Engn Res Ctr, Xiamen 361005, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Coupling quantum wells (QWs); low threshold; short cavity length; vertical-cavity surface-emitting lasers (VCSELs); ROOM-TEMPERATURE; VCSEL;
D O I：
10.1109/TED.2018.2825992
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ultralow lasing threshold of 413 mu J/cm(2) in GaN-based vertical-cavity surface-emitting lasers (VCSELs) was observed by reducing the cavity lengths between double-side dielectric distributed Bragg reflectors to 6 lambda. To the best of our knowledge, the threshold is the lowest value ever reported in nitride optically pumped VCSEL. The spontaneous emission factor (beta) was 0.1, and the degree of polarization was 91%. Effects of short cavity on spontaneous emission factors, gain coefficient enhancement, and absorption reduction were analyzed. In addition, effects of coupled quantum wells on the confinement factor were also discussed. We believe that our results would be meaningful for refining nitride VCSEL structure in the future.
引用
收藏
页码：2504 / 2508
页数：5
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