Single crystalline, cubic beta-SiC films were deposited by CREE Inc., USA on bonded SOI wafers. The SiC deposition took place under standard conditions used at CREE for deposition on Si wafers, and at deposition temperatures 25 degrees C and 50 degrees C below standard deposition conditions to investigate the influence of the deposition temperature on the damage of the buried oxide layer and therefore the insulating capability of that layer. Transmission electron microscopy (TEM), atomic force microscopy (AFM) and optical microscopy were used for structural analysis of the Silicon Carbide On Insulator (SiCOI) structure. The deposited beta-SiC films. the buried SiO2 layer, and the SiC/Si interface were investigated. First measurements showed similar results for all three deposition temperatures indicating that the deposition temperature is not the only parameter defining the structural and therefore also the electrical quality of the SiCOI wafers. The electrical measurements were performed up to T = 723 K (current limit of the equipment) and the results showed good electrical insulation of the SiC layer from the Si substrate in the whole temperature range. (C) 1997 Elsevier Science S.A.
