Ultrafast sub-30-fs all-optical switching based on gallium phosphide

被引:69
|
作者
Grinblat, Gustavo [1 ,2 ]
Nielsen, Michael P. [1 ,3 ]
Dichtl, Paul [1 ]
Li, Yi [4 ]
Oulton, Rupert F. [1 ]
Maier, Stefan A. [4 ]
机构
[1] Imperial Coll London, Blackett Lab, Dept Phys, London SW7 2AZ, England
[2] Univ Buenos Aires, Dept Fis, FCEN, IFIBA,CONICET, C1428EGA, Buenos Aires, DF, Argentina
[3] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia
[4] Ludwig Maximilians Univ Munchen, Chair Hybrid Nanosyst, Nanoinst Munchen, Fak Phys, D-80539 Munich, Germany
来源
SCIENCE ADVANCES | 2019年 / 5卷 / 06期
基金
英国工程与自然科学研究理事会;
关键词
2-PHOTON ABSORPTION; GAP; NONLINEARITY; SI;
D O I
10.1126/sciadv.aaw3262
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Gallium phosphide (GaP) is one of the few available materials with strong optical nonlinearity and negligible losses in the visible (lambda > 450 nm) and near-infrared regime. In this work, we demonstrate that a GaP film can generate sub30- fs (full width at half maximum) transmission modulation of up to similar to 70% in the 600- to 1000-nm wavelength range. Nonlinear simulations using parameters measured by the Z-scan approach indicate that the transmission modulation arises from the optical Kerr effect and two-photon absorption. Because of the absence of linear absorption, no slower free-carrier contribution is detected. These findings place GaP as a promising ultrafast material for all-optical switching at modulation speeds of up to 20 THz.
引用
收藏
页数:5
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