Gain compression in GaNHEMT amplifiers

被引：2
作者：
Ahmed, A [1 ]
Islam, SS [1 ]
Anwar, AFM [1 ]
机构：
[1] Univ Connecticut, Storrs, CT 06269 USA
来源：
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ISDRS.2001.984476
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Volterra series analysis is used to determine linear and nonlinear gain, output power of a GaN HEMT amplifier. Gain compression defined as the difference between linear and nonlinear gain is reported for varying temperatures. Measured 1-dB gain compression of 17.5dBm for a 1 x 500 mum Al0.15Ga0.85N/GaN HEMT at 300K and at 2GHz is in excellent agreement with the calculated value of 17dBm. With the operating frequency increasing from 1GHz to 6GHz the 1-dB gain compression point decreases from 20.5dBm to 13.8dBm at 300K. At 2GHz the I-dB gain compression point decreases from 17.5 dBm at 300K to 6.5dBm at 600K.
引用
收藏
页码：205 / 208
页数：4
相关论文
共 6 条
  • [1] A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series
    Ahmed, A
    Islam, SS
    Anwar, AFM
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (09) : 1518 - 1524
  • [2] ANALYSIS OF NONLINEAR-SYSTEMS WITH MULTIPLE INPUTS
    BUSSGANG, JJ
    EHRMAN, L
    GRAHAM, JW
    [J]. PROCEEDINGS OF THE IEEE, 1974, 62 (08) : 1088 - 1119
  • [3] TEMPERATURE ACTIVATED CONDUCTANCE IN GAN/ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS OPERATING AT TEMPERATURES UP TO 300-DEGREES-C
    KHAN, MA
    SHUR, MS
    KUZNIA, JN
    CHEN, Q
    BURM, J
    SCHAFF, W
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (09) : 1083 - 1085
  • [4] OPTIMIZATION OF 3RD-ORDER INTERMODULATION PRODUCT AND OUTPUT POWER FROM AN X-BAND MESFET AMPLIFIER USING VOLTERRA SERIES ANALYSIS
    LAMBRIANOU, GM
    AITCHISON, CS
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1985, 33 (12) : 1395 - 1403
  • [5] High power AlGaN/GaN HEMTs for microwave applications
    Wu, YF
    Keller, BP
    Keller, S
    Kapolnek, D
    Kozodoy, P
    Denbaars, SP
    Mishra, UK
    [J]. SOLID-STATE ELECTRONICS, 1997, 41 (10) : 1569 - 1574
  • [6] Zolper J. C., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P389, DOI 10.1109/IEDM.1999.824176
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