A Novel Latch-up Free SCR-LDMOS for Power-Rail ESD Clamp in Half-bridge Driver IC

被引:0
|
作者
Liu, Si-Yang [1 ]
Sun, Wei-Feng [1 ]
Pan, Hong-Wei [1 ]
Wang, Hao [1 ]
Qian, Qin-Song [1 ]
机构
[1] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China
来源
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The SCR-LDMOS device is a promising Electro Static Discharge (ESD) protection structure in high-voltage ICs for its high ESD robustness. However, its low holding voltage makes it susceptible to ESD-induced latch-up failure, especially used in the power-rail clamp circuits. This work presents a novel SCR-LDMOS with the NIL layer to achieve 17V holding voltage and 5.1A second breakdown current in a 0.5 mu m SOI process. The device has been applied for 15V power-rail ESD clamp in half-bridge driver IC.
引用
收藏
页码:716 / 718
页数:3
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