A Novel Latch-up Free SCR-LDMOS for Power-Rail ESD Clamp in Half-bridge Driver IC
被引:0
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作者:
Liu, Si-Yang
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机构:
Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R ChinaSoutheast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China
Liu, Si-Yang
[1
]
Sun, Wei-Feng
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机构:
Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R ChinaSoutheast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China
Sun, Wei-Feng
[1
]
Pan, Hong-Wei
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机构:
Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R ChinaSoutheast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China
Pan, Hong-Wei
[1
]
Wang, Hao
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机构:
Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R ChinaSoutheast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China
Wang, Hao
[1
]
Qian, Qin-Song
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机构:
Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R ChinaSoutheast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China
Qian, Qin-Song
[1
]
机构:
[1] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China
来源:
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012)
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2012年
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D O I:
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中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The SCR-LDMOS device is a promising Electro Static Discharge (ESD) protection structure in high-voltage ICs for its high ESD robustness. However, its low holding voltage makes it susceptible to ESD-induced latch-up failure, especially used in the power-rail clamp circuits. This work presents a novel SCR-LDMOS with the NIL layer to achieve 17V holding voltage and 5.1A second breakdown current in a 0.5 mu m SOI process. The device has been applied for 15V power-rail ESD clamp in half-bridge driver IC.