Investigation of Strain and Thin Film Relaxation in GexSi1-x/Si Strained-Layer Superlattice by Dark-Field Electron Holography

被引：2

作者：

Wang, Zhifeng ^{[1
]}

Yao, Yuan ^{[1
]}

He, Xiaoqing ^{[1
]}

Yang, Yang ^{[1
]}

Gu, Lin ^{[1
]}

Wang, Yanguo ^{[1
]}

Duan, Xiaofeng ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

MATERIALS TRANSACTIONS | 2012年 / 53卷 / 11期

关键词：

strain; relaxation; semiconductor; dark-field electron holography; convergent-beam electron diffraction; ELASTIC RELAXATION; DIFFRACTION; SPECIMENS;

D O I：

10.2320/matertrans.M2012138

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Elastic strain plays an important role in modifying physical properties such as the mobility of charge carriers in semiconductors. Strain analyses reveal that the reduction of the total strain and the elastic strain could be as large as 30 and 65%, respectively in a very thin transmission electron microscopy (TEM) specimen. The strain and thin film relaxation in a cross-sectional transmission electron microscopy (XTEM) specimen of GeSi/Si strained-layer superlattice has been investigated by dark-field electron holography with a large holographic field of view (FOV) to 150 nm achieved by moving the specimen down below the front-focal plane of the objective lens in free lens control mode. [doi:10.2320/matertrans.M2012138]

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收藏

页码：2019 / 2022

页数：4

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