Micromachined Probes for Submillimeter-Wave On-Wafer Measurements-Part I: Mechanical Design and Characterization

被引:18
作者
Reck, Theodore J. [1 ]
Chen, Lihan [2 ]
Zhang, Chunhu [2 ]
Arsenovic, Alex [2 ]
Groppi, Christopher [3 ]
Lichtenberger, Arthur W. [2 ]
Weikle, Robert M., II [2 ]
Barker, N. Scott [2 ]
机构
[1] Jet Prop Lab, Pasadena, CA 91030 USA
[2] Univ Virginia, Charles L Brown Dept Elect Engn, Charlottesville, VA 22903 USA
[3] Arizona State Univ, Sch Earth & Space Explorat, Tempe, AZ 85287 USA
关键词
Coplanar waveguide; micromachining; rectangular waveguide; submillimeter-wave integrated circuits; submillimeter-wave measurements; GALLIUM-ARSENIDE; FILM; AU;
D O I
10.1109/TTHZ.2011.2165013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The mechanical design and characterization of a micromachined on-wafer probe scalable to submillimeter-wave frequencies is presented. The design consists of a silicon micromachined probe with a ground-signal-ground configuration on a 15 mu m thick silicon substrate. This micromachined chip is housed in a metal waveguide block that provides mechanical support for the probe and enables coupling to a waveguide flange. Load-cell measurements of the probe show a DC contact resistance below 0.07 Omega with an applied force of 1 mN. A companion paper presents the electromagnetic design and calibrated on-wafer measurements at 500 to 750 GHz.
引用
收藏
页码:349 / 356
页数:8
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