Computation and modeling of microwave absorbing CuO/graphene nanocomposites
被引:25
作者:
Akinay, Yuksel
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Van Yuzuncu Yil Univ, Fac Engn, Min Engn, Van, Turkey
Van Yuzuncu Yil Univ, Fac Engn Elect & Elect Engn, Van, TurkeyVan Yuzuncu Yil Univ, Fac Engn, Min Engn, Van, Turkey
Akinay, Yuksel
[1
,2
]
Kizilcay, Abdullah O.
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Van Yuzuncu Yil Univ, Fac Engn, Min Engn, Van, Turkey
Van Yuzuncu Yil Univ, Fac Engn Elect & Elect Engn, Van, TurkeyVan Yuzuncu Yil Univ, Fac Engn, Min Engn, Van, Turkey
Kizilcay, Abdullah O.
[1
,2
]
机构:
[1] Van Yuzuncu Yil Univ, Fac Engn, Min Engn, Van, Turkey
[2] Van Yuzuncu Yil Univ, Fac Engn Elect & Elect Engn, Van, Turkey
In this study, the microwave absorption properties of single- and double-layer composites were investigated for experimental and numerical solution in the 8.2 to 12.4 GHz for different thickness (t(m)) of composites. Herein, the single-layer composites (R1: CuO and R2: CuO-containing graphene nanoparticle [GNP]) and double-layer composites that composed of R1 and R2 layers were fabricated. The first double-layer composite labeled as D1 contains R1 as a matching layer and R2 as an absorbing layer and the second double-layer composite labeled as D2 contains R2 as a matching layer and R1 as an absorbing layer. D1 and D2 produced composites were also designed numerically and denoted as M1 and M2, respectively. The measured and simulated reflection loss (R-L) of double-layer composites shows similar performance, and it was observed that the microwave absorbers obtained with experimental studies can be modeled using computer design. The M2 double-layer design based on 5 mm of the matching layer and 2 mm of the absorbing layer shows a minimum R-L value of -33.7 dB at 10.06 GHz and an absorption bandwidth of about 1.13 GHz below -10 dB compared to single-layer composites.
机构:
Def Mat & Stores Res & Dev Establishment, Kanpur 208013, Uttar Pradesh, IndiaDef Mat & Stores Res & Dev Establishment, Kanpur 208013, Uttar Pradesh, India
Gupta, K. K.
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Abba, S. M.
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Def Mat & Stores Res & Dev Establishment, Kanpur 208013, Uttar Pradesh, IndiaDef Mat & Stores Res & Dev Establishment, Kanpur 208013, Uttar Pradesh, India
Abba, S. M.
;
Goswami, T. H.
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机构:
Def Mat & Stores Res & Dev Establishment, Kanpur 208013, Uttar Pradesh, IndiaDef Mat & Stores Res & Dev Establishment, Kanpur 208013, Uttar Pradesh, India
Goswami, T. H.
;
Abhyankar, A. C.
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DIAT, Pune 411025, Maharashtra, IndiaDef Mat & Stores Res & Dev Establishment, Kanpur 208013, Uttar Pradesh, India
机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Mai, Y. J.
;
Wang, X. L.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Wang, X. L.
;
Xiang, J. Y.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Xiang, J. Y.
;
Qiao, Y. Q.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Qiao, Y. Q.
;
Zhang, D.
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h-index: 0
机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhang, D.
;
Gu, C. D.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Gu, C. D.
;
Tu, J. P.
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
机构:
Def Mat & Stores Res & Dev Establishment, Kanpur 208013, Uttar Pradesh, IndiaDef Mat & Stores Res & Dev Establishment, Kanpur 208013, Uttar Pradesh, India
Gupta, K. K.
;
Abba, S. M.
论文数: 0引用数: 0
h-index: 0
机构:
Def Mat & Stores Res & Dev Establishment, Kanpur 208013, Uttar Pradesh, IndiaDef Mat & Stores Res & Dev Establishment, Kanpur 208013, Uttar Pradesh, India
Abba, S. M.
;
Goswami, T. H.
论文数: 0引用数: 0
h-index: 0
机构:
Def Mat & Stores Res & Dev Establishment, Kanpur 208013, Uttar Pradesh, IndiaDef Mat & Stores Res & Dev Establishment, Kanpur 208013, Uttar Pradesh, India
Goswami, T. H.
;
Abhyankar, A. C.
论文数: 0引用数: 0
h-index: 0
机构:
DIAT, Pune 411025, Maharashtra, IndiaDef Mat & Stores Res & Dev Establishment, Kanpur 208013, Uttar Pradesh, India
机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Mai, Y. J.
;
Wang, X. L.
论文数: 0引用数: 0
h-index: 0
机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Wang, X. L.
;
Xiang, J. Y.
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h-index: 0
机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Xiang, J. Y.
;
Qiao, Y. Q.
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h-index: 0
机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Qiao, Y. Q.
;
Zhang, D.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhang, D.
;
Gu, C. D.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Gu, C. D.
;
Tu, J. P.
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China