Strontium hafnate films deposited by physical vapor deposition

被引：20

作者：

McCarthy, I.

Agustin, M. P.

Shamuilia, S.

Stemmer, S.

Afanas'ev, V. V.

Campbell, S. A.

机构：

[1] Univ Minnesota, Minneapolis, MN 55455 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Louvain, Afd Halfgeleiderfys, BE-3001 Heverlee, Belgium

来源：

THIN SOLID FILMS | 2006年 / 515卷 / 04期

基金：

美国国家科学基金会;

关键词：

insulators; metal-oxide semiconductor structure (MOS);

D O I：

10.1016/j.tsf.2006.07.030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Strontium hafnate films are predicted to have desirable properties for use as a high-permittivity gate insulator. Such a film is of extreme interest to the scaling of Metal Oxide Semiconductor (MOS) transistors. Thin films of strontium hafnate have been prepared by cosputtering of Hf and SrO2, Strontium rich films appear to resist crystallization up to temperatures of 1000 degrees C, although high resolution electron microscopy suggests that nanocrystals form after high temperature annealing. Early measurements of MOS capacitors indicate a permittivity of approximately 35 and a lowest bandgap of about 4.4 eV (c) 2006 Elsevier B.V All rights reserved.

引用

页码：2527 / 2530

页数：4