III-V on Si platform and its assembly technology

被引：0
|
作者：
Fukuda, Hiroshi [1 ,2 ]
Fujii, Takuro [1 ,2 ]
Takeda, Koji [1 ,2 ]
Aihara, Takuma [1 ]
Nishi, Hidetaka [1 ,2 ]
Kishi, Toshiki [1 ]
Shikama, Kota [1 ]
Matsuo, Shinji [1 ,2 ]
机构：
[1] NTT Corp, NTT Device Technol Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa, Japan
[2] NTT Corp, NTT Nanophoton Ctr, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa, Japan
来源：
23RD OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC2018) | 2018年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
An active area fabricated on silicon enables extremely high light confinement, resulting in a compact and energy efficient laser. Flip-chip bonding and direct fiber attachment technologies were applied to the lasers as a feasibility study.
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页数：2
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