Cathodoluminescence Quenching in Yb-doped ZnO Nanostructures

被引：7

作者：

Susarrey-Arce, A. ^{[1
]}

Herrera-Zaldivar, M. ^{[1
]}

de la Cruz, W. ^{[1
]}

Pal, U. ^{[2
]}

机构：

[1] Univ Nacl Autonoma Mexico, Ctr Ciencias Mat Condensada, Ensenada 22800, BC, Mexico

[2] Univ Autonoma Puebla, Inst Fis, Puebla 72570, Pue, Mexico

来源：

JOURNAL OF NANO RESEARCH | 2009年 / 5卷

关键词：

ZnO nanostructures; Yb-doping; Cathodoluminescence; OPTICAL-PROPERTIES; ENERGY-TRANSFER; IMPLANTED GAN; LUMINESCENCE; PHOTOLUMINESCENCE; SPECTRA; IONS;

D O I：

10.4028/www.scientific.net/JNanoR.5.177

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Cathodoluminescence (CL) quenching was observed in ZnO nanostructures when doped with Yb by both chemical and physical methods. CL spectra of the samples revealed a defect emission at 2.25 eV in samples prepared by the chemical method, and an emission at 2.5 eV in samples prepared by the physical method. From the thermal treatment studies, it was found that oxygen vacancies are responsible for the 2.5 eV emission. Observed CL quenching in ZnO is explained through the participation of point defects in the energy transfer process from ZnO to Yb3+.

引用

页码：177 / 183

页数：7

共 21 条

[1] Theoretical investigations of the optical spectra and EPR parameters for Yb3+ ions in GaN epilayer [J].

Dammak, M. ;

Kammoun, S. ;

Maalej, R. ;

Koubaa, T. ;

Kamoun, M. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2007, 432 (1-2) :18-22

[2] LUMINESCENCE OF ERBIUM IMPLANTED IN VARIOUS SEMICONDUCTORS - IV-MATERIALS, III-V-MATERIALS AND II-VI MATERIALS [J].

FAVENNEC, PN ;

LHARIDON, H ;

SALVI, M ;

MOUTONNET, D ;

LEGUILLOU, Y .

ELECTRONICS LETTERS, 1989, 25 (11) :718-719

[3] Spectra and energy levels of Tb3+ (4f8) in GaN [J].

Gruber, JB ;

Zandi, B ;

Lozykowski, HJ ;

Jadwisienczak, WM .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) :5127-5132

[4] Intensity dependence and transient dynamics of donor-acceptor pair recombination in ZnO thin films grown on (001) silicon [J].

Guo, B ;

Qiu, ZR ;

Wong, KS .

APPLIED PHYSICS LETTERS, 2003, 82 (14) :2290-2292

[5] Cathodoluminescence study of ytterbium doped GaSb [J].

Hidalgo, P ;

Méndez, B ;

Ruiz, C ;

Bermúdez, V ;

Piqueras, J ;

Diéguez, E .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 121 (1-2) :108-111

[6] Structural and luminescence properties of Eu-doped ZnO nanorods fabricated by a microemulsion method [J].

Ishizumi, A ;

Kanemitsu, Y .

APPLIED PHYSICS LETTERS, 2005, 86 (25) :1-3

[7] Optical properties of Yb ions in GaN epilayer [J].

Jadwisienczak, WM ;

Lozykowski, HJ .

OPTICAL MATERIALS, 2003, 23 (1-2) :175-181

[8] Energy transfer from the host to EU3+ in ZnO [J].

Jia, WY ;

Monge, K ;

Fernandez, F .

OPTICAL MATERIALS, 2003, 23 (1-2) :27-32

[9] Optical properties of zinc oxide nanoparticles and nanorods synthesized using an organometallic method [J].

Kahn, Myrtil L. ;

Cardinal, Thierry ;

Bousquet, Bruno ;

Monge, Miguel ;

Jubera, Veronique ;

Chaudret, Bruno .

CHEMPHYSCHEM, 2006, 7 (11) :2392-2397

[10] Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy [J].

Kim, S ;

Rhee, SJ ;

Turnbull, DA ;

Reuter, EE ;

Li, X ;

Coleman, JJ ;

Bishop, SG .

APPLIED PHYSICS LETTERS, 1997, 71 (02) :231-233

← 1 2 3 →