All electrical measurement of spin injection in a magnetic p-n junction diode

被引：21

作者：

Chen, Peifeng ^{[1
]}

Moser, Juergen ^{[1
]}

Kotissek, Philipp ^{[1
]}

Sadowski, Janusz ^{[1
]}

Zenger, Marcus ^{[1
]}

Weiss, Dieter ^{[1
]}

Wegscheider, Werner ^{[1
]}

机构：

[1] Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.74.241302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetic p-n junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving electrons from a ferromagnetic injector (Fe), into a bulk semiconductor (n-GaAs) via Schottky contact. For detection, a diluted magnetic semiconductor (p-GaMnAs) layer is used. Clear magnetoresistance was observed only when a high forward bias was applied across the p-n junction.

引用

页数：4

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