The Race To Replace Tin-Doped Indium Oxide: Which Material Will Win?

被引:740
|
作者
Kumar, Akshay [1 ]
Zhou, Chongwu [1 ]
机构
[1] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA
关键词
LIGHT-EMITTING-DIODES; FEW-LAYER GRAPHENE; LARGE-AREA; TRANSPARENT; FILMS; ELECTRODES; SINGLE;
D O I
10.1021/nn901903b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The search for materials that can replace tin-doped indium oxide (ITO) as the leading transparent conductive electrode (TCE) has intensified significantly in the past few years, motivated by the ever-increasing price of indium. Materials such as carbon nanotube (CNT) films, graphene films; metal nanowire gratings, and random networks have been at the forefront of research in this direction. A paper by Will et al. in this issue discusses the use of solution-processed graphene as the TCE in organic light-emitting devices. Advantages such as large-scale fabrication at relatively less expense, compatibility with flexible substrates, and improving performance have significantly contributed to their case as potential candidates for TCEs. Demonstrations of various display and photovoltaic devices using TCEs made of these materials, with performances rivaling those employing ITO, have provided the research community with encouragement to explore new materials and to address the associated scientific and technological challenges.
引用
收藏
页码:11 / 14
页数:4
相关论文
共 50 条
  • [1] Bevel etching of tin-doped indium oxide
    vandenMeerakker, JEAM
    Jacobs, JWM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (02) : L40 - L42
  • [2] Defect structures of tin-doped indium oxide
    Warschkow, O
    Ellis, DE
    González, GB
    Mason, TO
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2003, 86 (10) : 1700 - 1706
  • [3] Effect of tin level on microstructure of tin-doped indium oxide
    Grzeta, Biserka
    Popovic, Jasminka
    Tkalcec, Emilija
    Tonejc, Andjelka M.
    Bijelic, Mirjana
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2008, 64 : C542 - C542
  • [4] Synthesis and Characterization of Advanced Nanomaterials: Tin-Doped Indium Oxide (ITO) and Platinium Deposited on Tin-Doped Indium Oxide (Pt/ITO)
    Khuong Anh Nguyen Quoc
    Hau Thi Hien Vo
    Tuan Phan Dinh
    Long Giang Bach
    Van Thi Thanh Ho
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 18 (10) : 7246 - 7250
  • [5] Synthesis of tin oxide, indium oxide and tin-doped indium oxide nanowires by chemical vapor deposition
    Wong, K. K.
    Fung, M. K.
    Sun, Y. C.
    Chen, X. Y.
    Ng, Alan M. C.
    Djurisic, A. B.
    Chan, W. K.
    NANOPHOTONIC MATERIALS VIII, 2011, 8094
  • [6] Preparation and characterisation of tin-doped indium oxide films
    Kachouane, A
    Addou, M
    Bougrine, A
    El idrissi, B
    Messoussi, R
    Regragui, M
    Bérnede, JC
    MATERIALS CHEMISTRY AND PHYSICS, 2001, 70 (03) : 285 - 289
  • [7] Nanostructured Tin-Doped Indium Oxide for CO Sensing
    Kale, Girish M.
    SCIENCE OF ADVANCED MATERIALS, 2011, 3 (05) : 879 - 885
  • [8] (PHOTO)ELECTROCHEMICAL CHARACTERIZATION OF TIN-DOPED INDIUM OXIDE
    VANDENMEERAKKER, JEAM
    MEULENKAMP, EA
    SCHOLTEN, M
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) : 3282 - 3288
  • [9] Interstitial oxygen in tin-doped indium oxide transparent conductors
    Warschkow, O
    Miljacic, L
    Ellis, DE
    González, GB
    Mason, TO
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2006, 89 (02) : 616 - 619
  • [10] ELECTRON-SCATTERING IN TIN-DOPED INDIUM AND INDIUM OXIDE-FILMS
    DOBROVOLSKII, VN
    ISHCHUK, LV
    NINIDZE, GK
    INORGANIC MATERIALS, 1989, 25 (08) : 1115 - 1118