Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials

被引：66

作者：

Jeong, Hyun ^{[1
,2
]}

Oh, Hye Min ^{[1
,3
]}

Bang, Seungho ^{[1
,3
]}

Jeong, Hyeon Jun ^{[1
,3
]}

An, Sung-Jin ^{[1
,3
]}

Han, Gang Hee ^{[1
]}

Kim, Hyun ^{[1
,3
]}

Yun, Seok Joon ^{[1
,3
]}

Kim, Ki Kang ^{[4
]}

Park, Jin Cheol ^{[1
,3
]}

Lee, Young Hee ^{[1
,3
]}

Lerondel, Gilles ^{[2
,3
]}

Jeong, Mun Seok ^{[1
,3
]}

机构：

[1] Sungkyunkwan Univ, Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 440746, South Korea

[2] Univ Technol Troyes, Inst Charles Delaunay, Lab Nanotechnol & Instrumentat Opt, CNRS,UMR 6281, BP 2060, F-10010 Troyes, France

[3] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea

[4] Dongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South Korea

来源：

NANO LETTERS | 2016年 / 16卷 / 03期

关键词：

Graphene; h-BN; monolayer MoS2; metal-insulator-semiconductor diode; carrier tunneling; HEXAGONAL BORON-NITRIDE; LARGE-AREA SYNTHESIS; MOLYBDENUM-DISULFIDE; PHOTOCURRENT GENERATION; LAYER MOS2; MONOLAYER; GRAPHENE; HETEROSTRUCTURES; FILMS; ELECTROLUMINESCENCE;

D O I：

10.1021/acs.nanolett.5b04936

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nano electronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.

引用

页码：1858 / 1862

页数：5

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